Comparative Analysis of Switching Performance of Transistors in SOS process for RF Applications

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Amirkhanzadeh, Robabeh, Sjoland, Henrik, Tikka, Ajay and Faulkner, Michael (2010) Comparative Analysis of Switching Performance of Transistors in SOS process for RF Applications. In: Proceedings of the 2010 Asia Pacific Conference on Circuit and System : 6th-9th December 2010, Kuala Lumpur Malaysia. Rohani, Fakhrul Zaman, Ahmad, Siti Anom, Soh, Azura Che, Jaafar, Haslina, Zaini, Mohd Hanif Mohamad , Sidek, Mohd Hasimi Mohd and Shaufiq, Muhammad, eds. IEEE, Piscataway, N.J., pp. 1111-1114.

Abstract

Silicon-on-sapphire (SOS) technology is gaining rapid ground in RF applications due to its inherent low parasitic capacitance and the availability of high Q passive components. In this paper, performance of different transistors in SOS technology for switching applications has been verified. Quality factor, OFF performance, and harmonic distortion of all N-types transistors have been simulated and a comparative analysis is provided. Based on this analysis it can be concluded that for the same W/L ratio, NL and IN transistors in the FC process give higher quality factor and also higher C on/C off, while in the GC process, IN devices perform best.

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Item type Book Section
URI https://vuir.vu.edu.au/id/eprint/9952
DOI 10.1109/APCCAS.2010.5775012
Official URL http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arn...
ISBN 9781424474547 (print), 9781424474561
Subjects Historical > FOR Classification > 0906 Electrical and Electronic Engineering
Historical > FOR Classification > 1005 Communications Technologies
Historical > SEO Classification > 8901 Communication Networks and Services
Historical > Faculty/School/Research Centre/Department > Centre for Telecommunications and Micro-Electronics (CTME)
Keywords ResPubID21306, capacitors, performance evaluation, power transmission lines, Q factor, radio frequency, switching circuits, transistors IN transistor, NL transistor, RF applications, SOS process, Si-Al2O2, harmonic distortion, off performance, quality factor, silicon-on-sapphire, switching application, transistor switching performance SOS, switching performance, transmission line
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