Comparative Analysis of Switching Performance of Transistors in SOS process for RF Applications
Amirkhanzadeh, Robabeh, Sjoland, Henrik, Tikka, Ajay and Faulkner, Michael (2010) Comparative Analysis of Switching Performance of Transistors in SOS process for RF Applications. In: Proceedings of the 2010 Asia Pacific Conference on Circuit and System : 6th-9th December 2010, Kuala Lumpur Malaysia. Rohani, Fakhrul Zaman, Ahmad, Siti Anom, Soh, Azura Che, Jaafar, Haslina, Zaini, Mohd Hanif Mohamad , Sidek, Mohd Hasimi Mohd and Shaufiq, Muhammad, eds. IEEE, Piscataway, N.J., pp. 1111-1114.
Abstract
Silicon-on-sapphire (SOS) technology is gaining rapid ground in RF applications due to its inherent low parasitic capacitance and the availability of high Q passive components. In this paper, performance of different transistors in SOS technology for switching applications has been verified. Quality factor, OFF performance, and harmonic distortion of all N-types transistors have been simulated and a comparative analysis is provided. Based on this analysis it can be concluded that for the same W/L ratio, NL and IN transistors in the FC process give higher quality factor and also higher C on/C off, while in the GC process, IN devices perform best.
Dimensions Badge
Altmetric Badge
Item type | Book Section |
URI | https://vuir.vu.edu.au/id/eprint/9952 |
DOI | 10.1109/APCCAS.2010.5775012 |
Official URL | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arn... |
ISBN | 9781424474547 (print), 9781424474561 |
Subjects | Historical > FOR Classification > 0906 Electrical and Electronic Engineering Historical > FOR Classification > 1005 Communications Technologies Historical > SEO Classification > 8901 Communication Networks and Services Historical > Faculty/School/Research Centre/Department > Centre for Telecommunications and Micro-Electronics (CTME) |
Keywords | ResPubID21306, capacitors, performance evaluation, power transmission lines, Q factor, radio frequency, switching circuits, transistors IN transistor, NL transistor, RF applications, SOS process, Si-Al2O2, harmonic distortion, off performance, quality factor, silicon-on-sapphire, switching application, transistor switching performance SOS, switching performance, transmission line |
Citations in Scopus | 1 - View on Scopus |
Download/View statistics | View download statistics for this item |