Silicon-on-sapphire (SOS) technology is gaining
rapid ground in RF applications due to its inherent low parasitic
capacitance and the availability of high Q passive components. In
this paper, performance of different transistors in SOS technology
for switching applications has been verified. Quality factor, OFF
performance, and harmonic distortion of all N-types transistors
have been simulated and a comparative analysis is provided.
Based on this analysis it can be concluded that for the same
W/L ratio, NL and IN transistors in the FC process give higher
quality factor and also higher
C on/C off, while in the GC process, IN
devices perform best.